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MOSFET N CH 30V 3.5A 2-3Z1A
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 12 V | 1.5 nC | 126 mOhm | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | Surface Mount | 1.8 V 4 V | 123 pF | 1 V | 150 °C | N-Channel | 30 V | 3.5 A | 1 W |