DMTH31M7LPSQ-13

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Diodes Inc

TRANSISTOR MOSFET N-CHANNEL ENHANCEMENT 30V 100A 8-PIN POWERDI 5060 T/R

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Diodes Inc

TRANSISTOR MOSFET N-CHANNEL ENHANCEMENT 30V 100A 8-PIN POWERDI 5060 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH31M7LPSQ-13

Current - Continuous Drain (Id) @ 25°C	30 A, 100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5741 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	113 W, 1.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	1.7 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

175°C N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Grade	Package / Case	Technology	Qualification
Diodes Inc DMTH31M7LPSQ-13	5741 pF	PowerDI5060-8	30 V	-55 °C	175 ░C	1.7 mOhm	30 A 100 A	1.3 W 113 W	90 nC	16 V	3 V	4.5 V 10 V	N-Channel	Surface Mount	Automotive	8-PowerTDFN	MOSFET (Metal Oxide)	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements ofautomotive applications. It is AEC-Q101 qualified and is supported byPPAP.