DMTH31M7LPSQ Series

175°C N-Channel Enhancement Mode MOSFET

Catalog

175°C N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Grade	Package / Case	Technology	Qualification
Diodes Inc DMTH31M7LPSQ-13	5741 pF	PowerDI5060-8	30 V	-55 °C	175 ░C	1.7 mOhm	30 A 100 A	1.3 W 113 W	90 nC	16 V	3 V	4.5 V 10 V	N-Channel	Surface Mount	Automotive	8-PowerTDFN	MOSFET (Metal Oxide)	AEC-Q101

Catalog

175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C—Ideal for High Ambient Temperature Environments

• Low RDS(ON) – Minimizes On-State Losses

• Excellent Qgd x RDS(ON) Product (FOM)

• Advanced Technology for DC-DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• 100% Unclamped Inductive Switching – Ensures More Reliability

• Lead-Free Finish; RoHS Compliant

• Halogen- and Antimony-Free. "Green" Device

• The DMTH31M7LPSQ is suitable for automotive applications requiring specific change control; is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949:2016 certified facilities.

Description

This MOSFET is designed to meet the stringent requirements ofautomotive applications. It is AEC-Q101 qualified and is supported byPPAP.