Specification	CSD17313Q2Q1

Current - Continuous Drain (Id) (Tc)	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	3 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	2.7 nC, 2.7 nC
Input Capacitance (Ciss) (Max)	340 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-WDFN Exposed Pad
Package Length	2 mm
Package Name	6-WSON
Package Width	2 mm
Power Dissipation (Max)	2.3 W
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	1.8 V

CSD17313 Series

Part	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	FET Type	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max)	Package Width	Package Name	Package Length	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Ta)
Texas Instruments CSD17313Q2Q1	30 mOhm	30 V	1.8 V	2.7 nC 2.7 nC	5 A	MOSFET (Metal Oxide)	-55 °C	150 °C	3 V	8 V	2.3 W	N-Channel	Surface Mount	6-WDFN Exposed Pad	340 pF	2 mm	6-WSON	2 mm	-8 V	10 V
Texas Instruments CSD17313Q2T	30 mOhm	30 V	1.8 V	2.7 nC 2.7 nC		MOSFET (Metal Oxide)	-55 °C	150 °C	3 V	8 V	2.4 W 17 W	N-Channel	Surface Mount	6-WDFN Exposed Pad	340 pF	2 mm	6-WSON	2 mm	-8 V	10 V	5 A

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