IXFT50N60X

Obsolete

IXYS

MOSFET N-CH 600V 50A TO268

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Obsolete

IXYS

MOSFET N-CH 600V 50A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT50N60X

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	116 nC
Input Capacitance (Ciss) (Max) @ Vds	4660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	660 W
Rds On (Max) @ Id, Vgs	73 mOhm
Supplier Device Package	TO-268
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFT50N50P3	N-Channel	30 V	TO-268AA	960 W	500 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	5 V	85 nC	4335 pF	-55 °C	150 °C	50 A	120 mOhm	10 V	MOSFET (Metal Oxide)	Surface Mount
IXYS IXFT50N60X	N-Channel	30 V	TO-268		600 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	4.5 V	116 nC	4660 pF	-55 °C	150 °C	50 A	73 mOhm	10 V	MOSFET (Metal Oxide)	Surface Mount	660 W
IXYS IXFT50N20	N-Channel	20 V	TO-268AA		200 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			4400 pF	-55 °C	150 °C	50 A	45 mOhm	10 V	MOSFET (Metal Oxide)	Surface Mount	300 W	4 V	220 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 50A (Tc) 660W (Tc) Surface Mount TO-268

Technical documentation and resources

No documents available