MOSFET N-CH 500V 50A TO268
| Part | FET Type | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | N-Channel | 30 V | TO-268AA | 960 W | 500 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 5 V | 85 nC | 4335 pF | -55 °C | 150 °C | 50 A | 120 mOhm | 10 V | MOSFET (Metal Oxide) | Surface Mount | |||
IXYS | N-Channel | 30 V | TO-268 | 600 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 4.5 V | 116 nC | 4660 pF | -55 °C | 150 °C | 50 A | 73 mOhm | 10 V | MOSFET (Metal Oxide) | Surface Mount | 660 W | |||
IXYS | N-Channel | 20 V | TO-268AA | 200 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 4400 pF | -55 °C | 150 °C | 50 A | 45 mOhm | 10 V | MOSFET (Metal Oxide) | Surface Mount | 300 W | 4 V | 220 nC |