SCTH40N120G2V-7
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN H2PAK-7 PACKAGE
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SCTH40N120G2V-7
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN H2PAK-7 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCTH40N120G2V-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 61 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | H2PAK-7 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 4.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 15.06 | |
| 10 | $ 13.27 | |||
| 100 | $ 11.47 | |||
| 500 | $ 10.40 | |||
| Digi-Reel® | 1 | $ 15.06 | ||
| 10 | $ 13.27 | |||
| 100 | $ 11.47 | |||
| 500 | $ 10.40 | |||
| Tape & Reel (TR) | 1000 | $ 8.88 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 22.40 | |
| 10 | $ 21.59 | |||
| 25 | $ 20.85 | |||
| 50 | $ 20.17 | |||
| 100 | $ 19.54 | |||
| 250 | $ 19.06 | |||
| 500 | $ 18.68 | |||
| 1000 | $ 18.42 | |||
| TME | N/A | 1 | $ 36.65 | |
| 5 | $ 34.62 | |||
| 25 | $ 30.57 | |||
| 100 | $ 27.53 | |||
| 250 | $ 25.67 | |||
Description
General part information
SCTH40N120G2V-7 Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources