SCTH40N120G2V-7 Series
Manufacturer: STMicroelectronics
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SILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN H2PAK-7 PACKAGE
| Part | Vgs (Max) Positive | Vgs (Max) Negative | Rds On (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Technology | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 22 V | -10 V | 100 mOhm | 1200 V | 4.9 V | -55 °C | 175 °C | N-Channel | SiCFET (Silicon Carbide) | 61 nC 61 nC | 36 A | Surface Mount | 238 W | 1233 pF | 18 V | H2PAK-7 |