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DMP3007SCGQ-13 - Package Image for V-DFN3333-8

DMP3007SCGQ-13

Active
Diodes Inc

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsRecommended Soldering TechniquesDatasheet+1
DMP3007SCGQ-13 - Package Image for V-DFN3333-8

DMP3007SCGQ-13

Active
Diodes Inc

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsRecommended Soldering TechniquesDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3007SCGQ-13
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs64.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2826 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs6.8 mOhm
Supplier Device PackageV-DFN3333-8 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.98
10$ 1.27
100$ 0.86
500$ 0.68
1000$ 0.64
Digi-Reel® 1$ 1.98
10$ 1.27
100$ 0.86
500$ 0.68
1000$ 0.64
Tape & Reel (TR) 3000$ 0.53
6000$ 0.52

Description

General part information

DMP3007SCGQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.