DMP3007SCGQ Series

30V P-Channel Enhancement Mode MOSFET

Catalog

30V P-Channel Enhancement Mode MOSFET

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification
Diodes Inc DMP3007SCG-7	P-Channel	4.5 V 10 V	30 V	25 V	MOSFET (Metal Oxide)	6.8 mOhm	3 V	2.4 W	2826 pF	64.2 nC	50 A	V-DFN3333-8 (Type B)	Surface Mount	8-PowerVDFN	-55 °C	150 °C
Diodes Inc DMP3007SCGQ-13	P-Channel	4.5 V 10 V	30 V	25 V	MOSFET (Metal Oxide)	6.8 mOhm	3 V	1 W	2826 pF	64.2 nC	50 A	V-DFN3333-8 (Type B)	Surface Mount	8-PowerVDFN	-55 °C	150 °C	Automotive	AEC-Q101
Diodes Inc DMP3007SCG-13	P-Channel	4.5 V 10 V	30 V	25 V	MOSFET (Metal Oxide)	6.8 mOhm	3 V	2.4 W	2826 pF	64.2 nC	50 A	V-DFN3333-8 (Type B)	Surface Mount	8-PowerVDFN	-55 °C	150 °C

Catalog

30V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – Ensures On State Losses are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• 100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliability

• HBM ESD Protection Level of 8kV Typical

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.