IGC39T65QEX1SA1
ActiveInfineon Technologies
TRANS IGBT CHIP N-CH 650V 3-PIN DIE WAFER
Deep-Dive with AI
Search across all available documentation for this part.
IGC39T65QEX1SA1
ActiveInfineon Technologies
TRANS IGBT CHIP N-CH 650V 3-PIN DIE WAFER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IGC39T65QEX1SA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 75 A |
| Current - Collector Pulsed (Icm) | 225 A |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Die |
| Supplier Device Package | Die |
| Vce(on) (Max) @ Vge, Ic | 2.22 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IGC39T65 Series
Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.
Documents
Technical documentation and resources