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BSC037N08NS5ATMA1 - 8-Power TDFN

BSC037N08NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 3.7 MOHM;

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BSC037N08NS5ATMA1 - 8-Power TDFN

BSC037N08NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 3.7 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC037N08NS5ATMA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]58 nC
Input Capacitance (Ciss) (Max) @ Vds4200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W, 114 W
Rds On (Max) @ Id, Vgs [Max]3.7 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.18
10$ 2.07
100$ 1.44
500$ 1.17
1000$ 1.08
2000$ 1.03
Digi-Reel® 1$ 3.18
10$ 2.07
100$ 1.44
500$ 1.17
1000$ 1.08
2000$ 1.03
Tape & Reel (TR) 5000$ 1.03
NewarkEach (Supplied on Full Reel) 5000$ 1.03

Description

General part information

BSC037 Series

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.

Documents

Technical documentation and resources

No documents available