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INFINEON OPTIMOS™ 5 POWER MOSFETS IN LOGIC LEVEL FEATURE LOW RDS(ON) AND SMALL FORM FACTOR
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4200 pF | 58 nC | 8-PowerTDFN | 3.8 V | 3.7 mOhm | 22 A 100 A | N-Channel | MOSFET (Metal Oxide) | 6 V 10 V | 3 W 136 W | 20 V | -55 °C | 175 ░C | PG-TDSON-8-7 | 80 V | Surface Mount |
Infineon Technologies | 4200 pF | 58 nC | 8-PowerTDFN | 3.8 V | 3.7 mOhm | 100 A | N-Channel | MOSFET (Metal Oxide) | 6 V 10 V | 2.5 W 114 W | 20 V | -55 °C | 175 ░C | PG-TDSON-8-7 | 80 V | Surface Mount |