STFI34N65M5

Obsolete

STMicroelectronics

MOSFET N CH 650V 28A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N CH 650V 28A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI34N65M5

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Technology
STMicroelectronics STFI34N65M5	2700 pF	25 V	110 mOhm	5 V	TO-262-3 Full Pack I2PAK	Through Hole	TO-281 (I2PAKFP)	650 V	28 A	35 W	N-Channel	62.5 nC	150 °C	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 28A (Tc) 35W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources