MOSFET N CH 650V 28A I2PAKFP
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 2700 pF | 25 V | 110 mOhm | 5 V | TO-262-3 Full Pack I2PAK | Through Hole | TO-281 (I2PAKFP) | 650 V | 28 A | 35 W | N-Channel | 62.5 nC | 150 °C | 10 V | MOSFET (Metal Oxide) |