AUIRS2127STR

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRS2127STR

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
Grade	Automotive
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Qualification	AEC-Q100
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

Part	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Qualification	Logic Voltage - VIL, VIH	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Type	Channel Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Driven Configuration	Supplier Device Package	Grade	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Infineon Technologies AUIRS2127STR	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	12 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns
Infineon Technologies AUIRS21271S	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	9 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns
Infineon Technologies AUIRS2127S	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	12 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns
Infineon Technologies AUIRS21271STR	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	9 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources