AUIRS2127 Series

Catalog

IC GATE DRVR HIGH-SIDE 8SOIC

Part	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Qualification	Logic Voltage - VIL, VIH	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Type	Channel Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Driven Configuration	Supplier Device Package	Grade	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Infineon Technologies AUIRS2127STR	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	12 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns
Infineon Technologies AUIRS21271S	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	9 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns
Infineon Technologies AUIRS2127S	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	12 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns
Infineon Technologies AUIRS21271STR	600 V	Non-Inverting	AEC-Q100	0.8 V 2.5 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	IGBT N-Channel MOSFET	Single	1	290 mA	600 mA	9 V	20 V	High-Side	8-SOIC	Automotive	80 ns	40 ns