DMTH10H032LDVWQ-13

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Diodes Inc

100V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH10H032LDVWQ-13

Active

Diodes Inc

100V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques

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Technical Specifications

Parameters and characteristics for this part

Specification	DMTH10H032LDVWQ-13

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	7.2 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	1.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	PowerDI3333-8 (SWP) (Type UXD)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

DMTH10H032LDVWQ Series

100V +175°C Dual N-Channel Enhancement Mode MOSFET

Part	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Power - Max [Max]	Configuration	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Grade
Diodes Inc DMTH10H032LDVWQ-13	AEC-Q101	683 pF	8-PowerVDFN	32 mOhm	PowerDI3333-8 (SWP) (Type UXD)	MOSFET (Metal Oxide)	1.5 W	2 N-Channel	2.5 V	100 V	11.9 nC	7.2 A	-55 °C	175 ░C	Surface Mount	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.38
		6000	$ 0.36
		9000	$ 0.34
		15000	$ 0.33
		21000	$ 0.32
		30000	$ 0.31

Description

General part information

DMTH10H032LDVWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: wireless charging, DC-DC converters, and power management.