DMTH10H032LDVWQ Series

100V +175°C Dual N-Channel Enhancement Mode MOSFET

Catalog

100V +175°C Dual N-Channel Enhancement Mode MOSFET

Part	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Power - Max [Max]	Configuration	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Grade
Diodes Inc DMTH10H032LDVWQ-13	AEC-Q101	683 pF	8-PowerVDFN	32 mOhm	PowerDI3333-8 (SWP) (Type UXD)	MOSFET (Metal Oxide)	1.5 W	2 N-Channel	2.5 V	100 V	11.9 nC	7.2 A	-55 °C	175 ░C	Surface Mount	Automotive

Catalog

100V +175°C Dual N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Low Input Capacitance

• Fast Switching Speed

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH10H032LDVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: wireless charging, DC-DC converters, and power management.