IPW90R120C3XKSA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 900 V, 36 A, 0.12 OHM, TO-247, THROUGH HOLE

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Infineon Technologies

POWER MOSFET, N CHANNEL, 900 V, 36 A, 0.12 OHM, TO-247, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	IPW90R120C3XKSA1

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	PG-TO247-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPW90R120C3XKSA1	270 nC	Through Hole	TO-247-3	417 W	PG-TO247-3-21	MOSFET (Metal Oxide)	120 mOhm	3.5 V	20 V	N-Channel	6800 pF	36 A	900 V	10 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 36A (Tc) 417W (Tc) Through Hole PG-TO247-3-21

Technical documentation and resources