POWER MOSFET, N CHANNEL, 900 V, 36 A, 0.12 OHM, TO-247, THROUGH HOLE
| Part | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Package / Case | Power Dissipation (Max) [Max] | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 270 nC | Through Hole | TO-247-3 | 417 W | PG-TO247-3-21 | MOSFET (Metal Oxide) | 120 mOhm | 3.5 V | 20 V | N-Channel | 6800 pF | 36 A | 900 V | 10 V | -55 °C | 150 °C |