Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
General part information
N-Channel 100 V 40A (Tc) 3.75W (Ta), 107W (Tc) Through Hole TO-220AB
Technical documentation and resources
Parameters and characteristics commom to parts in this series
| Specification | SUP40N10-30-E3 | SUP40 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 36 - 38.5 A |
| Drain to Source Voltage (Vdss) | 100 V | 100 - 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel, P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 60 nC | 60 - 160 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF | 2400 - 5000 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 175 ░C | 150 - 175 ░C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power Dissipation (Max) | 107 W, 3.75 W | 2 - 300 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm | 30 - 60 mOhm |
| Supplier Device Package | TO-220AB | TO-220AB |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 - 30 V |
| Vgs(th) (Max) @ Id | 4 V | 3 - 4 V |
MOSFET N-CH 250V 40A TO220AB
| Part | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUP40N25-60-E3 | N-Channel | Through Hole | 60 mOhm | 140 nC | MOSFET (Metal Oxide) | 5000 pF | 30 V | 4 V | 250 V | TO-220-3 | 3.75 W, 300 W | TO-220AB | -55 °C | 175 ░C | 6 V, 10 V | |
Vishay Siliconix SUP40P10-43-GE3 | P-Channel | Through Hole | 43 mOhm | 160 nC | MOSFET (Metal Oxide) | 4600 pF | 20 V | 3 V | 100 V | TO-220-3 | 2 W, 125 W | TO-220AB | -55 °C | 150 °C | 4.5 V, 10 V | 36 A |
Vishay Siliconix SUP40N10-30-GE3 | N-Channel | Through Hole | 30 mOhm | 60 nC | MOSFET (Metal Oxide) | 2400 pF | 20 V | 4 V | 100 V | TO-220-3 | 3.1 W, 89 W | TO-220AB | -55 °C | 150 °C | 6 V, 10 V | 38.5 A |
Vishay Siliconix SUP40N10-30-E3 | N-Channel | Through Hole | 30 mOhm | 60 nC | MOSFET (Metal Oxide) | 2400 pF | 20 V | 4 V | 100 V | TO-220-3 | 3.75 W, 107 W | TO-220AB | -55 °C | 175 ░C | 6 V, 10 V |
