SUP40P10-43-GE3

Obsolete

Vishay Siliconix

MOSFET P-CH 100V 36A TO220AB

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Obsolete

Vishay Siliconix

MOSFET P-CH 100V 36A TO220AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 36A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220AB

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	SUP40P10-43-GE3	SUP40 Series

Current - Continuous Drain (Id) @ 25°C	36 A	36 - 38.5 A
Drain to Source Voltage (Vdss)	100 V	100 - 250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V	4.5 - 10 V
FET Type	P-Channel	N-Channel, P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC	60 - 160 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF	2400 - 5000 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 - 175 ░C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-220-3	TO-220-3
Power Dissipation (Max)	2 W, 125 W	2 - 300 W
Rds On (Max) @ Id, Vgs	43 mOhm	30 - 60 mOhm
Supplier Device Package	TO-220AB	TO-220AB
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 - 30 V
Vgs(th) (Max) @ Id	3 V	3 - 4 V

MOSFET N-CH 250V 40A TO220AB

Part	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Vishay Siliconix SUP40N25-60-E3	N-Channel	Through Hole	60 mOhm	140 nC	MOSFET (Metal Oxide)	5000 pF	30 V	4 V	250 V	TO-220-3	3.75 W, 300 W	TO-220AB	-55 °C	175 ░C	6 V, 10 V
Vishay Siliconix SUP40P10-43-GE3	P-Channel	Through Hole	43 mOhm	160 nC	MOSFET (Metal Oxide)	4600 pF	20 V	3 V	100 V	TO-220-3	2 W, 125 W	TO-220AB	-55 °C	150 °C	4.5 V, 10 V	36 A
Vishay Siliconix SUP40N10-30-GE3	N-Channel	Through Hole	30 mOhm	60 nC	MOSFET (Metal Oxide)	2400 pF	20 V	4 V	100 V	TO-220-3	3.1 W, 89 W	TO-220AB	-55 °C	150 °C	6 V, 10 V	38.5 A
Vishay Siliconix SUP40N10-30-E3	N-Channel	Through Hole	30 mOhm	60 nC	MOSFET (Metal Oxide)	2400 pF	20 V	4 V	100 V	TO-220-3	3.75 W, 107 W	TO-220AB	-55 °C	175 ░C	6 V, 10 V