DMN6010SCTBQ-13

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Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques +1

DMN6010SCTBQ-13

Active

Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN6010SCTBQ-13

Current - Continuous Drain (Id) @ 25°C	128 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2692 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	312 W, 5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-263AB (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

DMN6010SCTBQ Series

60V N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Grade	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package
Diodes Inc DMN6010SCTBQ-13	10 mOhm	128 A	5 W 312 W	N-Channel	46 nC	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	MOSFET (Metal Oxide)	2692 pF	Surface Mount	Automotive	AEC-Q101	-55 °C	150 °C	20 V	TO-263AB (D2PAK)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	800	$ 1.57
		1600	$ 1.34
		2400	$ 1.27
		5600	$ 1.22

Description

General part information

DMN6010SCTBQ Series

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.