DMN6010SCTBQ Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Grade	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package
Diodes Inc DMN6010SCTBQ-13	10 mOhm	128 A	5 W 312 W	N-Channel	46 nC	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	MOSFET (Metal Oxide)	2692 pF	Surface Mount	Automotive	AEC-Q101	-55 °C	150 °C	20 V	TO-263AB (D2PAK)

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production –Ensures More Reliable and Robust End Application

• Low RDS(on) – Minimizes Power Losses

• Low Qg – Minimizes Switching Losses

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), please referto the related automotive grade (Q-suffix) part. A listing canbe found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references inAEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.