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STW34NM60N - TO-247-3 HiP

STW34NM60N

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.092 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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STW34NM60N - TO-247-3 HiP

STW34NM60N

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.092 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationSTW34NM60NSTW34 Series
Current - Continuous Drain (Id) @ 25°C29 A28 - 29 A
Drain to Source Voltage (Vdss)600 V600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)10 V10 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC62.5 - 80 nC
Input Capacitance (Ciss) (Max) @ Vds2722 pF2700 - 2722 pF
Mounting TypeThrough HoleThrough Hole
Operating Temperature150 °C150 °C
Package / CaseTO-247-3TO-247-3
Power Dissipation (Max) [Max]250 W190 - 250 W
Rds On (Max) @ Id, Vgs-110 mOhm
Rds On (Max) @ Id, Vgs [Max]105 mOhm105 mOhm
Supplier Device PackageTO-247-3TO-247-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)25 V25 V
Vgs(th) (Max) @ Id4 V4 - 5 V

STW34 Series

TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

PartDrive Voltage (Max Rds On, Min Rds On)TechnologyVgs (Max)FET TypeSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CMounting TypePackage / CaseVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsOperating TemperaturePower Dissipation (Max) [Max]Input Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, Vgs [Max]
STMicroelectronics
STW34N65M5
10 V
MOSFET (Metal Oxide)
25 V
N-Channel
TO-247-3
28 A
Through Hole
TO-247-3
5 V
650 V
110 mOhm
62.5 nC
150 °C
190 W
2700 pF
STMicroelectronics
STW34NM60N
10 V
MOSFET (Metal Oxide)
25 V
N-Channel
TO-247-3
29 A
Through Hole
TO-247-3
4 V
600 V
80 nC
150 °C
250 W
2722 pF
105 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 5.80
DigikeyTube 1$ 10.19
30$ 8.13
120$ 7.28
510$ 6.42
1020$ 5.78
NewarkEach 1$ 10.71
10$ 9.23
25$ 7.70
60$ 7.26
120$ 6.50
270$ 5.54

Description

General part information

STW34 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.