STW34NM60N
ActiveMOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.092 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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STW34NM60N
ActiveMOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.092 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW34NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2722 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs [Max] | 105 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
STW34NM60N Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources