STW34N65M5

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STMicroelectronics

TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

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STW34N65M5

Active

STMicroelectronics

TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW34N65M5

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW34NM60N Series

N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STW34N65M5	10 V	MOSFET (Metal Oxide)	25 V	N-Channel	TO-247-3	28 A	Through Hole	TO-247-3	5 V	650 V	110 mOhm	62.5 nC	150 °C	190 W	2700 pF
STMicroelectronics STW34NM60N	10 V	MOSFET (Metal Oxide)	25 V	N-Channel	TO-247-3	29 A	Through Hole	TO-247-3	4 V	600 V		80 nC	150 °C	250 W	2722 pF	105 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.28
		30	$ 4.98
		120	$ 4.27
		510	$ 3.79
		1020	$ 3.25
		2010	$ 3.06

Description

General part information

STW34NM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources