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DMNH6069SFVWQ-13 - Package Image for PowerDI3333-8

DMNH6069SFVWQ-13

Active
Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI3333-8

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DMNH6069SFVWQ-13 - Package Image for PowerDI3333-8

DMNH6069SFVWQ-13

Active
Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI3333-8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMNH6069SFVWQ-13
Current - Continuous Drain (Id) @ 25°C5 A, 18 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds740 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.21
6000$ 0.20
9000$ 0.19
15000$ 0.18
21000$ 0.17

Description

General part information

DMNH6069SFVWQ Series

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.