DMNH6069SFVWQ Series

60V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Part	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Technology	Vgs(th) (Max) @ Id
Diodes Inc DMNH6069SFVWQ-13	50 mOhm	N-Channel	740 pF	3 W	PowerDI3333-8 (SWP) Type UX	14 nC	8-PowerVDFN	60 V	5 A 18 A	Surface Mount Wettable Flank	20 V	Automotive	4.5 V 10 V	-55 °C	175 ░C	AEC-Q101	MOSFET (Metal Oxide)	3 V
Diodes Inc DMNH6069SFVW-7	50 mOhm	N-Channel	740 pF	3 W	PowerDI3333-8 (SWP) Type UX	14 nC	8-PowerVDFN	60 V	5 A 18 A	Surface Mount Wettable Flank	20 V		4.5 V 10 V	-55 °C	175 ░C		MOSFET (Metal Oxide)	3 V

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Key Features

• Rated to +175°C—Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low RDS(ON)—Ensures Minimal On-State Losses  Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• Wettable Flank for Improved Optical Inspections

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotive-products/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.