IRF6641TRPBF
ObsoleteInfineon Technologies
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 59.9 MOHM;
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IRF6641TRPBF
ObsoleteInfineon Technologies
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 59.9 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF6641TRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C [Max] | 26 A, 4.6 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 48 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | DirectFET™ Isometric MZ |
| Power Dissipation (Max) | 2.8 W, 89 W |
| Rds On (Max) @ Id, Vgs | 59.9 mOhm |
| Supplier Device Package | DIRECTFET™ MZ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 4.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRF6641 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.