IRF6641 Series

Catalog

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 59.9 MOHM;

Part	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Technology	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C [Max]	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	FET Type
Infineon Technologies IRF6641TRPBF	Surface Mount	200 V	4.9 V	MOSFET (Metal Oxide)	DirectFET™ Isometric MZ	2.8 W 89 W	48 nC	59.9 mOhm	DIRECTFET™ MZ	10 V	4.6 A 26 A	20 V	150 °C	-40 °C	2290 pF	N-Channel
Infineon Technologies IRF6641TRPBF	Surface Mount	200 V	4.9 V	MOSFET (Metal Oxide)	DirectFET™ Isometric MZ	2.8 W 89 W	48 nC	59.9 mOhm	DIRECTFET™ MZ	10 V	4.6 A 26 A	20 V	150 °C	-40 °C	2290 pF	N-Channel