DMS2220LFDB-7

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

Search across all available documentation for this part.

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

Technical Specifications

Parameters and characteristics for this part

Specification	DMS2220LFDB-7

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	632 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

P-Channel Enhancement Mode MOSFET with Integrated SBR

Part	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMS2220LFDB-7	Surface Mount	12 V	3.5 A	P-Channel	U-DFN2020-6 (Type B)	6-UDFN Exposed Pad	1.8 V 4.5 V	MOSFET (Metal Oxide)	1.4 W	95 mOhm	632 pF	20 V	1.3 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode MOSFET with Integrated SBR

Technical documentation and resources