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P-Channel Enhancement Mode MOSFET with Integrated SBR
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P-Channel Enhancement Mode MOSFET with Integrated SBR
P-Channel Enhancement Mode MOSFET with Integrated SBR
| Part | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 12 V | 3.5 A | P-Channel | U-DFN2020-6 (Type B) | 6-UDFN Exposed Pad | 1.8 V 4.5 V | MOSFET (Metal Oxide) | 1.4 W | 95 mOhm | 632 pF | 20 V | 1.3 V | -55 °C | 150 °C |