TSM850N06CX RFG

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 3A SOT23

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 3A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM850N06CX RFG

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	529 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.7 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
Taiwan Semiconductor Corporation TSM850N06CX RFG	N-Channel	-55 °C	150 °C	4.5 V 10 V	SOT-23	20 V	Surface Mount	60 V	9.5 nC	SC-59 SOT-23-3 TO-236-3	1.7 W	2.5 V	MOSFET (Metal Oxide)	85 mOhm	3 A	529 pF
Taiwan Semiconductor Corporation TSM850N06CX	N-Channel	-55 °C	150 °C	4.5 V 10 V	SOT-23	20 V	Surface Mount	60 V	9.5 nC	SC-59 SOT-23-3 TO-236-3		2.5 V	MOSFET (Metal Oxide)	85 mOhm	2.3 A 3 A	529 pF

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General part information

N-Channel 60 V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23

Technical documentation and resources