MOSFET N-CHANNEL 60V 3A SOT23
| Part | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | N-Channel | -55 °C | 150 °C | 4.5 V 10 V | SOT-23 | 20 V | Surface Mount | 60 V | 9.5 nC | SC-59 SOT-23-3 TO-236-3 | 1.7 W | 2.5 V | MOSFET (Metal Oxide) | 85 mOhm | 3 A | 529 pF |
Taiwan Semiconductor Corporation | N-Channel | -55 °C | 150 °C | 4.5 V 10 V | SOT-23 | 20 V | Surface Mount | 60 V | 9.5 nC | SC-59 SOT-23-3 TO-236-3 | 2.5 V | MOSFET (Metal Oxide) | 85 mOhm | 2.3 A 3 A | 529 pF |