TSM4NB60CH C5G

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Taiwan Semiconductor Corporation

MOSFET N-CH 600V 4A TO251

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Taiwan Semiconductor Corporation

MOSFET N-CH 600V 4A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4NB60CH C5G

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Package / Case	FET Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Taiwan Semiconductor Corporation TSM4NB60CH C5G	4 A	10 V	TO-251 (IPAK)	500 pF	600 V	30 V	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	MOSFET (Metal Oxide)	2.5 Ohm	50 W	4.5 V	14.5 nC	-55 °C	150 °C
Taiwan Semiconductor Corporation TSM4NB60CP ROG	4 A	10 V	TO-252 (DPAK)	500 pF	600 V	30 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	MOSFET (Metal Oxide)	2.5 Ohm	50 W	4.5 V	14.5 nC	-55 °C	150 °C
Taiwan Semiconductor Corporation TSM4NB60CI C0G	4 A	10 V	ITO-220AB	500 pF	600 V	30 V	Through Hole	TO-220-3 Full Pack Isolated Tab	N-Channel	MOSFET (Metal Oxide)	2.5 Ohm	50 W	4.5 V	14.5 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 4A (Tc) 50W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available