TSM4NB60 Series

Catalog

MOSFET N-CH 600V 4A TO251

Part	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Gate Charge (Max)	Mounting Type	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Vgs (Max)	Technology	Package Name	Package / Case
Taiwan Semiconductor Corporation TSM4NB60CH C5G	4 A	-55 °C	150 °C	10 V	500 pF	50 W	14.5 nC	Through Hole	N-Channel	2.5 Ohm	600 V	4.5 V	30 V	MOSFET (Metal Oxide)	TO-251 (IPAK)	IPAK TO-251-3 Short Leads TO-251AA
Taiwan Semiconductor Corporation TSM4NB60CP ROG	4 A	-55 °C	150 °C	10 V	500 pF	50 W	14.5 nC	Surface Mount	N-Channel	2.5 Ohm	600 V	4.5 V	30 V	MOSFET (Metal Oxide)	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3
Taiwan Semiconductor Corporation TSM4NB60CI C0G	4 A	-55 °C	150 °C	10 V	500 pF	50 W	14.5 nC	Through Hole	N-Channel	2.5 Ohm	600 V	4.5 V	30 V	MOSFET (Metal Oxide)	ITO-220AB	Isolated Tab TO-220-3 Full Pack