DMN3016LSS-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 30V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

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DMN3016LSS-13

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 30V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

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Technical Specifications

Parameters and characteristics for this part

Specification	DMN3016LSS-13

Current - Continuous Drain (Id) @ 25°C	10.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1415 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

DMN3016LFDE Series

30V Dual N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Power Dissipation (Max) [Max]	Package / Case [y]	Package / Case [x]
Diodes Inc DMN3016LFDE-13	20 V	10 A	730 mW	1415 pF	-55 °C	150 °C	U-DFN2020-6 (Type E)	2 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	6-PowerUDFN	Surface Mount	25.1 nC
Diodes Inc DMN3016LFDF-13	20 V	12 A	2.02 W	1415 pF	-55 °C	150 °C	U-DFN2020-6 (Type F)	2 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	6-UDFN Exposed Pad	Surface Mount	25.1 nC
Diodes Inc DMN3016LDV-13		21 A		1184 pF	-55 °C	150 °C	POWERDI3333-8	2 V	MOSFET (Metal Oxide)			12 mOhm		8-PowerVDFN	Surface Mount	9.5 nC	2 N-Channel (Dual)
Diodes Inc DMN3016LPS-13	20 V	10.8 A		1415 pF	-55 °C	150 °C	PowerDI5060-8	2 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	8-PowerTDFN	Surface Mount	25.1 nC		1.18 W
Diodes Inc DMN3016LSS-13	20 V	10.3 A	1.5 W	1415 pF	-55 °C	150 °C	8-SO	2.5 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	8-SOIC	Surface Mount	25.1 nC			3.9 mm	0.154 in
Diodes Inc DMN3016LDN-13		9.2 A		1415 pF	-55 °C	150 °C	V-DFN3030-8 (Type J)	2 V	MOSFET (Metal Oxide)			20 mOhm		8-PowerVDFN	Surface Mount	11.3 nC	2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.51
		10	$ 0.43
		100	$ 0.30
		500	$ 0.24
		1000	$ 0.19
	Digi-Reel®	1	$ 0.51
		10	$ 0.43
		100	$ 0.30
		500	$ 0.24
		1000	$ 0.19
	Tape & Reel (TR)	2500	$ 0.17
		5000	$ 0.16
		12500	$ 0.15
		25000	$ 0.15

Description

General part information

DMN3016LFDE Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMN3016LSS-13

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DMN3016LSS-13

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Technical Specifications

DMN3016LFDE Series

Pricing

Description

DMN3016LFDE Series

Documents

Recommended Soldering Techniques

Datasheet

Package PDF

Datasheet

DMN3016LFDE Series