DMN3016LFDE Series

30V Dual N-Channel Enhancement Mode MOSFET

Catalog

30V Dual N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Power Dissipation (Max) [Max]	Package / Case [y]	Package / Case [x]
Diodes Inc DMN3016LFDE-13	20 V	10 A	730 mW	1415 pF	-55 °C	150 °C	U-DFN2020-6 (Type E)	2 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	6-PowerUDFN	Surface Mount	25.1 nC
Diodes Inc DMN3016LFDF-13	20 V	12 A	2.02 W	1415 pF	-55 °C	150 °C	U-DFN2020-6 (Type F)	2 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	6-UDFN Exposed Pad	Surface Mount	25.1 nC
Diodes Inc DMN3016LDV-13		21 A		1184 pF	-55 °C	150 °C	POWERDI3333-8	2 V	MOSFET (Metal Oxide)			12 mOhm		8-PowerVDFN	Surface Mount	9.5 nC	2 N-Channel (Dual)
Diodes Inc DMN3016LPS-13	20 V	10.8 A		1415 pF	-55 °C	150 °C	PowerDI5060-8	2 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	8-PowerTDFN	Surface Mount	25.1 nC		1.18 W
Diodes Inc DMN3016LSS-13	20 V	10.3 A	1.5 W	1415 pF	-55 °C	150 °C	8-SO	2.5 V	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	12 mOhm	30 V	8-SOIC	Surface Mount	25.1 nC			3.9 mm	0.154 in
Diodes Inc DMN3016LDN-13		9.2 A		1415 pF	-55 °C	150 °C	V-DFN3030-8 (Type J)	2 V	MOSFET (Metal Oxide)			20 mOhm		8-PowerVDFN	Surface Mount	11.3 nC	2 N-Channel (Dual)

Catalog

30V Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.