DMP1046UFDB-13

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Diodes Inc

TRANS MOSFET P-CH 12V 3.8A 6-PIN UDFN EP T/R

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Diodes Inc

TRANS MOSFET P-CH 12V 3.8A 6-PIN UDFN EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMP1046UFDB-13

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs	17.9 nC
Input Capacitance (Ciss) (Max) @ Vds	915 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	61 mOhm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Dual P-Channel Enhancement Mode MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Technology	Package / Case	Drain to Source Voltage (Vdss)	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMP1046UFDB-13	Surface Mount	3.8 A	915 pF	2 P-Channel	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	12 V	1.4 W	17.9 nC	61 mOhm	U-DFN2020-6 (Type B)	1 V	-55 °C	150 °C
Diodes Inc DMP1046UFDB-7	Surface Mount	3.8 A	915 pF	2 P-Channel	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	12 V	1.4 W	17.9 nC	61 mOhm	U-DFN2020-6 (Type B)	1 V	-55 °C	150 °C

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General part information

Dual P-Channel Enhancement Mode MOSFET

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