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Dual P-Channel Enhancement Mode MOSFET
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Dual P-Channel Enhancement Mode MOSFET
Dual P-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Technology | Package / Case | Drain to Source Voltage (Vdss) | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 3.8 A | 915 pF | 2 P-Channel | MOSFET (Metal Oxide) | 6-UDFN Exposed Pad | 12 V | 1.4 W | 17.9 nC | 61 mOhm | U-DFN2020-6 (Type B) | 1 V | -55 °C | 150 °C |
Diodes Inc | Surface Mount | 3.8 A | 915 pF | 2 P-Channel | MOSFET (Metal Oxide) | 6-UDFN Exposed Pad | 12 V | 1.4 W | 17.9 nC | 61 mOhm | U-DFN2020-6 (Type B) | 1 V | -55 °C | 150 °C |