CLS03,LNITTOQ(O

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CLS03,LNITTOQ(O

Capacitance @ Vr, F	345 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	L-FLAT™
Speed	200 mA, 500 ns
Supplier Device Package	L-FLAT™ (4x5.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	580 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case
Toshiba Semiconductor and Storage CLS03(TE16L,PCD,Q)	60 V	1 mA	Surface Mount	125 °C	-40 °C	200 mA 500 ns	580 mV	L-FLAT™ (4x5.5)	Schottky	10 A	345 pF	L-FLAT™
Toshiba Semiconductor and Storage CLS03,LNITTOQ(O	60 V	1 mA	Surface Mount	125 °C	-40 °C	200 mA 500 ns	580 mV	L-FLAT™ (4x5.5)	Schottky	10 A	345 pF	L-FLAT™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 60 V 10A Surface Mount L-FLAT™ (4x5.5)

Technical documentation and resources