CLS03 Series
Manufacturer: Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 10A L-FLAT
| Part | Current - Average Rectified (Io) | Technology | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Capacitance | Package / Case | Voltage - DC Reverse (Vr) (Max) | Package Name | Package Length | Package Width | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Mounting Type | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ | 4 mm | 5.5 mm | 500 ns | 200 mA | Surface Mount | 1 mA | 580 mV |
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ | 4 mm | 5.5 mm | 500 ns | 200 mA | Surface Mount | 1 mA | 580 mV |
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ | 4 mm | 5.5 mm | 500 ns | 200 mA | Surface Mount | 1 mA | 580 mV |
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ | 4 mm | 5.5 mm | 500 ns | 200 mA | Surface Mount | 1 mA | 580 mV |