STGFW40V60F

Obsolete

STMicroelectronics

IGBT, SINGLE, 600V, 80A, TO-3PF

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DocumentsDatasheet

STGFW40V60F

Obsolete

STMicroelectronics

IGBT, SINGLE, 600V, 80A, TO-3PF

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGFW40V60F

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	226 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power - Max [Max]	62.5 W
Supplier Device Package	TO-3PF
Switching Energy	456 µJ, 411 µJ
Td (on/off) @ 25°C	208 ns, 52 ns
Test Condition	10 Ohm, 40 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGFW40H65FB Series

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Gate Charge	Package / Case	Switching Energy	Supplier Device Package	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGFW40H65FB	80 A	Through Hole	142 ns	40 ns	5 Ohm 15 V 40 A 400 V	-55 °C	175 ░C	2 V	650 V	62.5 W	210 nC	TO-3P-3 Full Pack	363 µJ 498 µJ	TO-3PF-3	Trench Field Stop
STMicroelectronics STGFW40V60F	80 A	Through Hole		52 ns 208 ns	10 Ohm 15 V 40 A 400 V	-55 °C	175 ░C	2.3 V		62.5 W	226 nC	TO-3P-3 Full Pack	411 µJ 456 µJ	TO-3PF	Trench Field Stop	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.62
		30	$ 2.87
		120	$ 2.46
Newark	Each	1	$ 4.44
		10	$ 4.43
		25	$ 2.55
		50	$ 2.36
		100	$ 2.16
		250	$ 2.15
		600	$ 2.14

Description

General part information

STGFW40H65FB Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources