STGFW40H65FB Series

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Catalog

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Gate Charge	Package / Case	Switching Energy	Supplier Device Package	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGFW40H65FB	80 A	Through Hole	142 ns	40 ns	5 Ohm 15 V 40 A 400 V	-55 °C	175 ░C	2 V	650 V	62.5 W	210 nC	TO-3P-3 Full Pack	363 µJ 498 µJ	TO-3PF-3	Trench Field Stop
STMicroelectronics STGFW40V60F	80 A	Through Hole		52 ns 208 ns	10 Ohm 15 V 40 A 400 V	-55 °C	175 ░C	2.3 V		62.5 W	226 nC	TO-3P-3 Full Pack	411 µJ 456 µJ	TO-3PF	Trench Field Stop	600 V

Catalog

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.