IPB65R310CFDATMA1

Obsolete

Infineon Technologies

COOLMOS™ SUPERJUNCTION MOSFET

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IPB65R310CFDATMA1

Obsolete

Infineon Technologies

COOLMOS™ SUPERJUNCTION MOSFET

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB65R310CFDATMA1

Current - Continuous Drain (Id) @ 25°C	11.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	104.2 W
Rds On (Max) @ Id, Vgs	310 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPB65R310 Series

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Grade	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Vgs (Max)	Power Dissipation (Max) [Max]
Infineon Technologies IPB65R310CFDAATMA1	MOSFET (Metal Oxide)	1110 pF	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	Surface Mount	310 mOhm	11.4 A	650 V	150 °C	-40 °C	N-Channel	41 nC	10 V	AEC-Q101	20 V	104.2 W
Infineon Technologies IPB65R310CFDATMA1	MOSFET (Metal Oxide)		4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		Surface Mount	310 mOhm	11.4 A	650 V	150 °C	-55 °C	N-Channel	41 nC	10 V		20 V	104.2 W
Infineon Technologies IPB65R310CFDATMA2	MOSFET (Metal Oxide)		4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		Surface Mount	310 mOhm	11.4 A	650 V	150 °C	-55 °C	N-Channel	41 nC	10 V		20 V	104.2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB65R310 Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

Technical documentation and resources

No documents available