IPB65R310 Series

Catalog

650 V COOLMOS™ CFDA AUTOMOTIVE POWER MOSFET PG-TO263-3

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Grade	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Vgs (Max)	Power Dissipation (Max) [Max]
Infineon Technologies IPB65R310CFDAATMA1	MOSFET (Metal Oxide)	1110 pF	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	Surface Mount	310 mOhm	11.4 A	650 V	150 °C	-40 °C	N-Channel	41 nC	10 V	AEC-Q101	20 V	104.2 W
Infineon Technologies IPB65R310CFDATMA1	MOSFET (Metal Oxide)		4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		Surface Mount	310 mOhm	11.4 A	650 V	150 °C	-55 °C	N-Channel	41 nC	10 V		20 V	104.2 W
Infineon Technologies IPB65R310CFDATMA2	MOSFET (Metal Oxide)		4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		Surface Mount	310 mOhm	11.4 A	650 V	150 °C	-55 °C	N-Channel	41 nC	10 V		20 V	104.2 W