
M24C02-WMN6P
NRNDSERIAL EEPROM, 2KBIT, 400KHZ, SOIC-8
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M24C02-WMN6P
NRNDSERIAL EEPROM, 2KBIT, 400KHZ, SOIC-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | M24C02-WMN6P |
|---|---|
| Access Time | 900 ns |
| Clock Frequency | 400 kHz |
| Memory Format | EEPROM |
| Memory Interface | I2C |
| Memory Organization [custom] | 8 |
| Memory Organization [custom] | 256 |
| Memory Size | 256 B |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Technology | EEPROM |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 2.5 V |
| Write Cycle Time - Word, Page | 5 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
M24C02-DRE Series
The M24C02-DRE is a 2-Kbit serial EEPROM device operating up to 105 °C. The M24C02-DRE is compliant with the level of reliability defined by the AEC-Q100 grade 2.
The device is accessed by a simple serial I2C compatible interface running up to 1 MHz.
The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M24C02-DRE is a byte-alterable memory (256 × 8 bits) organized as 16 pages of 16 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic.
Documents
Technical documentation and resources