IPB60R040CFD7ATMA1

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Infineon Technologies

MOSFET, N-CH, 600V, 50A, 150DEG C, 227W ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 600V, 50A, 150DEG C, 227W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R040CFD7ATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	108 nC
Input Capacitance (Ciss) (Max) @ Vds	4351 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPB60R040CFD7ATMA1	108 nC	227 W	4.5 V	N-Channel	50 A	MOSFET (Metal Oxide)	10 V	40 mOhm	600 V	4351 pF	PG-TO263-3-2	20 V	-55 °C	150 °C	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies IPB60R040C7ATMA1		227 W	4 V	N-Channel	50 A	MOSFET (Metal Oxide)	10 V	40 mOhm	600 V	4340 pF		20 V	-55 °C	150 °C	Surface Mount	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	107 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources